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| Silicon Junction FETs (Small Signal) 2SK3427 Silicon N-Channel Junction Unit: mm For impedance conversion in low frequency For electret capacitor microphone I Features * High mutual conductance gm * Low noise voltage of NV 1 0.40 -0.05 +0.10 0.12 -0.01 +0.02 3 1.50.2 5.80.2 2.10.1 2 2.200.15 I Absolute Maximum Ratings Ta = 25C Parameter Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Rating 20 20 2 2 2 200 -20 to +80 -55 to +150 Unit V V mA mA mA mW C C 10 (0.95) (0.95) 1.90.1 2.90.2 0.70.1 5 (0.5) 1: Drain 2: Source 3: Gate MiniT3-F1 Package Marking Symbol: 5E I Electrical Characteristics Ta = 25C 3C Parameter Drain current Symbol ID IDSS Mutual conductance Noise voltage Voltage gain gm NV GV1 GV2 GV3 GV. f* Voltage gain difference GV2 - GV1 GV1 - GV3 Conditions VDS = 2.0 V, RD = 2.2 k 1% VDS = 2.0 V, RD = 2.2 k 1%, VGS = 0 VD = 2.0 V, VGS = 0, f = 1 kHz VD = 2.0 V, RD = 2.2 k 1% CO = 5 pF, A-Curve VD = 2.0 V, RD = 2.2 k 1% CO = 5 pF, eG = 10 mV, f = 1 kHz VD = 12 V, RD = 2.2 k 1% CO = 5 pF, eG = 10 mV, f = 1 kHz VD = 1.5 V, RD = 2.2 k 1% CO = 5 pF, eG = 10 mV, f = 1 kHz VD = 2.0 V, RD = 2.2 k 1% CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz 0 0 -7.5 -4.0 -8.0 -4.7 -1.5 -5.0 0 1.7 4.0 1.7 dB Min 100 107 660 1 600 10 Typ Max 460 470 S V dB Unit A Note) *: GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.) Publication date: April 2002 SJF00034AED 1 2SK3427 PD Ta 250 1.6 Ta = 25C 1.4 ID VDS 0.30 VGS = 0.4 V 0.25 VDS = 2 V ID VGS Allowable power dissipation PD (mW) 200 Drain current ID (mA) 0.3 V 1.0 0.8 0.6 0.1 V 0.4 0V 0.2 - 0.1 V 0 2 4 6 8 10 0.2 V Drain current ID (mA) 1.2 0.20 Ta = 75C 0.15 25C 0.10 -25C 150 100 50 0.05 0 0 20 40 60 80 100 120 140 160 0 0 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 Ambient temperature Ta (C) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Yfs VGS 1.6 Yfs ID 1.6 VDS = 2 V Forward transadmittance Yfs (mS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 - 1.0 Forward transadmittance Yfs (mS) - 0.6 - 0.4 - 0.2 0 VDS = 2 V Ta = 25C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 - 0.8 0 20 40 60 80 100 120 140 150 160 200 Gate-source voltage VGS (V) Drain current ID (A) 2 SJF00034AED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY |
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